JPH0433327Y2 - - Google Patents

Info

Publication number
JPH0433327Y2
JPH0433327Y2 JP1985058741U JP5874185U JPH0433327Y2 JP H0433327 Y2 JPH0433327 Y2 JP H0433327Y2 JP 1985058741 U JP1985058741 U JP 1985058741U JP 5874185 U JP5874185 U JP 5874185U JP H0433327 Y2 JPH0433327 Y2 JP H0433327Y2
Authority
JP
Japan
Prior art keywords
alc
slabs
floor
joints
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1985058741U
Other languages
English (en)
Japanese (ja)
Other versions
JPS61176357U (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985058741U priority Critical patent/JPH0433327Y2/ja
Publication of JPS61176357U publication Critical patent/JPS61176357U/ja
Application granted granted Critical
Publication of JPH0433327Y2 publication Critical patent/JPH0433327Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Building Environments (AREA)
  • Roof Covering Using Slabs Or Stiff Sheets (AREA)
  • Finishing Walls (AREA)
  • Joining Of Building Structures In Genera (AREA)
  • Floor Finish (AREA)
JP1985058741U 1985-04-19 1985-04-19 Expired JPH0433327Y2 (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985058741U JPH0433327Y2 (en]) 1985-04-19 1985-04-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985058741U JPH0433327Y2 (en]) 1985-04-19 1985-04-19

Publications (2)

Publication Number Publication Date
JPS61176357U JPS61176357U (en]) 1986-11-04
JPH0433327Y2 true JPH0433327Y2 (en]) 1992-08-10

Family

ID=30584531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985058741U Expired JPH0433327Y2 (en]) 1985-04-19 1985-04-19

Country Status (1)

Country Link
JP (1) JPH0433327Y2 (en])

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6961117B2 (en) 2000-11-27 2005-11-01 The Trustees Of Columbia University In The City Of New York Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate
US7115503B2 (en) 2000-10-10 2006-10-03 The Trustees Of Columbia University In The City Of New York Method and apparatus for processing thin metal layers
US7160763B2 (en) 2001-08-27 2007-01-09 The Trustees Of Columbia University In The City Of New York Polycrystalline TFT uniformity through microstructure mis-alignment
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
US7220660B2 (en) 2000-03-21 2007-05-22 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
US7259081B2 (en) 2002-08-19 2007-08-21 Im James S Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity, and a structure of such film regions
US7311778B2 (en) 2003-09-19 2007-12-25 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7364952B2 (en) 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
US7399359B2 (en) 2002-04-01 2008-07-15 The Trustees of Columbia University in theCity of New York Method and system for providing a thin film with a controlled crystal orientation using pulsed laser induced melting and nucleation-initiated crystallization
US7622370B2 (en) 2002-08-19 2009-11-24 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions
US7638728B2 (en) 2003-09-16 2009-12-29 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2782670B2 (ja) * 1994-12-20 1998-08-06 株式会社ホクコン 貯水槽構成部材及びそれを用いた貯水槽

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57205653A (en) * 1981-06-11 1982-12-16 Asahi Chemical Ind Mounting device for panel
JPS6010039A (ja) * 1983-06-28 1985-01-19 旭化成株式会社 金属板と軽量気泡コンクリ−トの複合板

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220660B2 (en) 2000-03-21 2007-05-22 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
US7115503B2 (en) 2000-10-10 2006-10-03 The Trustees Of Columbia University In The City Of New York Method and apparatus for processing thin metal layers
US6961117B2 (en) 2000-11-27 2005-11-01 The Trustees Of Columbia University In The City Of New York Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate
US7160763B2 (en) 2001-08-27 2007-01-09 The Trustees Of Columbia University In The City Of New York Polycrystalline TFT uniformity through microstructure mis-alignment
US7399359B2 (en) 2002-04-01 2008-07-15 The Trustees of Columbia University in theCity of New York Method and system for providing a thin film with a controlled crystal orientation using pulsed laser induced melting and nucleation-initiated crystallization
US7259081B2 (en) 2002-08-19 2007-08-21 Im James S Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity, and a structure of such film regions
US7622370B2 (en) 2002-08-19 2009-11-24 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7364952B2 (en) 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
US7638728B2 (en) 2003-09-16 2009-12-29 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
US7311778B2 (en) 2003-09-19 2007-12-25 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films

Also Published As

Publication number Publication date
JPS61176357U (en]) 1986-11-04

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